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Diamond &Diamond &GaN Epitaxy Wafer

Additional information

Wafer Size

1inch to 2inch, or special made

Wafer Thickness

0-500um

Growth Method

MPCVD

Roughness of Growth Surface

Ra 1nm below

Thermal Conductivity

2200W/m.K

Product Introduction

Semi Grade Diamond Wafer is produced by MPCVD process.

Rewin offers leading Products On Diamond&GaN products

GaN on Diamond type

Diamond on GaN type

GaN bonding Diamond type

Diamond Heat Sink Wafer type

 

Diamond Growth Technology is produced by its knowhow technology process, Diamond owns excellent thermal conductivity up to 2200W/m.K, highly promising material.

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