With 2-150um thickness Silicon Epitaxial Layer on the Silicon Wafers, various doping element is available as doping element, Boron (B), Phosphorus (P), Arsenic (As), Antimonty (Sb), single doping and co-doping, light doping and heavy doping.

RMC uses word leading Epitaxial Equipment and its seasoned Epi Process knowledge to manufacture low defect and high quality Si Epitaxial wafers, less line&slip defects, high epitaxial layer thickness uniformity, epitaxial layer flatness all wafer ranges.

RMC Epitaxial Wafer is widely used in manufacturing Chips of Logic, 3D NAND, CMOS image sensor, IGBT, MOSFET, Super junction, BCD.