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| Wafer Size | 2inch to 4inch(50 to 100mm) |
|---|---|
| Growth Method | VGF method |
| Orientation | 100,111 |
| Wafer Thickness | 500-800um or per request |
| TTV (μm) | <20um or per discuss |
| Type/Dopant | Te dope or Zn dope |
| Carrier density | (1-100)E17 |
| Mobility | 200-3500 |
GaSb wafer is a III-V chemical compound semiconductor wafer, which is very critical material in infrared detector and infrared sensor application of its high sensitivity, long life, long lightweight, and great reliability. the spectral range for GaSb material can reach 4um area.
We will contact you as soon as possible, please pay attention to the email with the suffix “@rewinmc.com”.